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Xiamen Powerway Advanced Material Co. Authentic Jalen Ramsey Jersey ,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, which offer GaN template as follows:

N type, Si doped GaN template
N type, undoped GaN template
Semi-insulating, Fe doped GaN template
P type, Mg doped GaN template
AlN template
InGaN templates
Free Standing GaN template

They exhibit industry leading low defect densities and are epi ready for subsequent device epitaxy

For detail specs Dante Fowler Jr Jersey , please see below:
1)N type, Si doped GaN template

Conduction Type: Si doped (N+)
Thickness:4um,20um,30um,50um,100um
Orientation: c-axis (0001) ± 1.0°
Resistivity: <0.05 Ohm.cm
Dislocation Density:<1x108cm-2
Substrate Structure: GaN on Sapphire(0001)
Front Surface Finish (Ga-face): As-grown
Back Surface Finish: SSP or DSP
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
Available Grades: Production Dawuane Smoot Jersey , Research and Rider

2)N type, undoped GaN template

Conduction Type: undoped (N-)
Thickness:4um,20um,30um,50um,100um
Orientation: c-axis (0001) ± 1.0°
Resistivity: <0.05 Ohm.cm
Dislocation Density:<1x108cm-2
Substrate Structure: GaN on Sapphire(0001)
Front Surface Finish (Ga-face): As-grown
Back Surface Finish: SSP or DSP
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
Available Grades: Production Will Richardson Jersey , Research and Rider

3)Semi-insulating, Fe doped GaN template

Conduction Type: Fe doped (SI)
Thickness:30um,90um
Orientation: c-axis (0001) ± 1.0°
Resistivity: >1x106Ω·cm
Dislocation Density:<1x108cm-2
Substrate Structure: GaN on Sapphire(0001)
Front Surface Finish (Ga-face): As-grown
Back Surface Finish: SSP or DSP
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
Available Grades: Production, Research and Rider

4)P type, Mg doped GaN template

Conduction Type: Mg doped (P+)
Thickness:5um
Orientation: C-axis(0001)+-1O
Resistivity: <1Ω·cm or custom
Dopant Concentration:>1E17(cm-3) or custom
Substrate Structure: GaN on Sapphire(0001)
Front Surface Finish (Ga-face): As-grown
Back Surface Finish: SSP or DSP
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm)
Available Grades: Production, Research and Rider

5)AlN template

Conduction Type: semi-insulating
Thickness:50-1000nm+- 10%
Orientation: C-axis(0001)+-1O
Orientation Flat:A-plane
XRD FWHM of (0002):<200 arcsec
Substrate Structure: AlN on sapphire
Back Surface Finish: SSP or DSP DJ Chark Jersey ,epi-ready
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm),
Available Grades: Production, Research and Rider

6)InGaN templates

Conduction Type:In doped, semi-insulating
Thickness:50-200nm, custom
Orientation: C-axis(0001)+-1O
Dislocation Density:~ 108 cm-2
Substrate Structure:
Surface Finish: SSP or DSP,epi-ready
Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm)
Available Grades: Production, Research and Rider

7)Free Standing GaN template

Available Sizes: 2”dia Taven Bryan Jersey ,1.8"dia,1.5"dia, 1"dia,14mm*15mm square,10mm*10.5mm square,5mm*5.5mm square
Available Grades: LED grade, LD grade

If you find them interesting A. J. Cann Jersey ,please contact us: victorchan@powerwaywafer or www.powerwaywafer. Event Management Services Market Augmented Expansion to be Registered by 2025
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